Low-temperature positron-lifetime studies of proton-irradiated silicon

Journal Article · Sat Dec 15 04:00:00 EST 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.42.11166· OSTI ID:5961443

Maekinen, S; Rajainmaeki, H ^[1]; Linderoth, S ^[2]

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1. Department of Physics, University of Jyvaeskylae, Jyvaeskylae (Finland)
2. Laboratory of Applied Physics, Technical University of Denmark, Lyngby (Denmark)

The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific trapping rate of positrons to both of these negatively charged monovacancy-type defects has been found to have a clear {ital T}{sup {minus}0.5} dependence. The positron lifetime in perfect Si is measured to be 217{plus minus}1 ps, and the monovacancy lifetime is found to be 275{plus minus}5 ps. Also the negatively charged vacancy-oxygen complexes were found, both experimentally and theoretically, to give rise to a positron lifetime of about 275 ps.

• OSTI ID: 5961443
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 42:17; ISSN 0163-1829; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
HIGH TEMPERATURE
LIFETIME
LOW TEMPERATURE
MEDIUM TEMPERATURE
MEV RANGE
MEV RANGE 10-100
NUCLEON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
PROTON BEAMS
RADIATION EFFECTS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE
TRAPPING
ULTRALOW TEMPERATURE
VACANCIES
VERY LOW TEMPERATURE