Aging behavior and surge endurance of 870-900 nm AlGaAs lasers with nonabsorbing mirrors
Journal Article
·
· IEEE J. Quant. Electron.; (United States)
The reliability of 870-900 nm AlGaAs TJS lasers has been investigated. An emission wavelength longer than 870 nm is realized by utilizing the band tailing effect due to heavy Zn-diffusion in the active region. A nonabsorbing mirror structure is employed to eliminate both gradual degradation and catastrophic damage of the facets. Stable continuous operation for over 10000 hours has been confirmed at ambient temperatures higher than 50/sup 0/C and output powers more than 5 mW/ facet. MTTF longer than 10/sup 5/ hours is expected for screened devices. Surge endurance has been improved to be nearly one order of magnitude higher than that for a conventional structure.
- Research Organization:
- Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Tokyo 180, Japan
- OSTI ID:
- 5961110
- Journal Information:
- IEEE J. Quant. Electron.; (United States), Vol. QE-20:11
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
SEMICONDUCTOR LASERS
AGING
MIRRORS
SURGES
ALUMINIUM ARSENIDES
DAMAGE
DIFFUSION
EMISSION
GALLIUM ARSENIDES
MEDIUM TEMPERATURE
RELIABILITY
SCREENS
STABILITY
WAVELENGTHS
ZINC
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
GALLIUM COMPOUNDS
LASERS
METALS
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)
SEMICONDUCTOR LASERS
AGING
MIRRORS
SURGES
ALUMINIUM ARSENIDES
DAMAGE
DIFFUSION
EMISSION
GALLIUM ARSENIDES
MEDIUM TEMPERATURE
RELIABILITY
SCREENS
STABILITY
WAVELENGTHS
ZINC
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
GALLIUM COMPOUNDS
LASERS
METALS
PNICTIDES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)