Comparison of the damage and contamination produced by CF/sub 4/ and CF/sub 4//H/sub 2/ reactive ion etching: The role of hydrogen

Journal Article · Mon Apr 28 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96452· OSTI ID:5955833

Mu, X C; Fonash, S J; Rohatgi, A; Rieger, J

In this study, the damage and contamination effects of CF/sub 4/ and CF/sub 4//H/sub 2/ reactive ion etching of silicon are compared. Included for the first time is an electrical, structural, and compositional examination of etched silicon which establishes the material property modifications resulting from the incorporating of hydrogen into the reactive ion etching environment. The results of this comparison of CF/sub 4/ and CF/sub 4//H/sub 2/ etching show that, for the same etching parameters, the presence of hydrogen causes more structural damage in the etched Si surface. However, the hydrogen is found to passivate its own damage rendering it electrically inactive. Subsequent exposure to temperatures exceeding approx.450 /sup 0/C removes the passivation.

• Research Organization: Engineering Sciences Program, The Pennsylvania State University, University Park, Pennsylvania 16802
• OSTI ID: 5955833
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 48:17
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ETCHING
PHYSICAL RADIATION EFFECTS
CARBON FLUORIDES
CARBON TETRAFLUORIDE
CHEMICAL COMPOSITION
CRYSTAL STRUCTURE
DAMAGE
ELECTRICAL PROPERTIES
HYDROGEN
ION COLLISIONS
PASSIVATION
CARBON COMPOUNDS
COLLISIONS
ELEMENTS
FLUORIDES
FLUORINATED ALIPHATIC HYDROCARBONS
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HALOGENATED ALIPHATIC HYDROCARBONS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC FLUORINE COMPOUNDS
ORGANIC HALOGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMIMETALS
SURFACE FINISHING
360605* - Materials- Radiation Effects