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Investigation of the thermal and electrical transport properties of niobium and niobium films at temperatures between 9 and 50 K

Journal Article · · J. Low Temp. Phys.; (United States)
DOI:https://doi.org/10.1007/BF00118716· OSTI ID:5950326
The thermal conductivity and the electrical conductivity of niobium crystals and niobium films have been investigated in the normal state from 9 to 50 K. The deviations from the Matthiessen rule, W=..beta../T+..cap alpha..T/sup 2/, have been studied in detail for the thermal case. The investigation shows a slight dependence of the electron--phonon scattering coefficient ..cap alpha.. upon the impurity content of the sample. With the specific electrical residual resistivity rho/sub 0/ as the measure for the impurity content, the following correlation can be formulated: ..cap alpha..=1.2 x 10/sup -3/(rho/sub 0//(..cap omega..-cm))/sup 0.04/, ..cap alpha.. being obtained in cm/WK. Above 20 K an additional scattering mechanism occurs. The temperature dependence of the additional resistance ..delta..W between 20 and 50 K is proportional to T/sup 5.5/xxxT/sup 4/. Possible causes of this phenomenon are discussed. For the discussion, all the data available in the literature on the thermal conductivity of niobium in this temperature region are used.
Research Organization:
Technische Universitaet Dresden, Sektion Physik, Dresden, German Democratic Republic
OSTI ID:
5950326
Journal Information:
J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 36:3; ISSN JLTPA
Country of Publication:
United States
Language:
English