Silicon micromachining based on porous silicon formation

Conference · Tue Jan 01 00:00:00 EST 1991

OSTI ID:5947363

Guilinger, T R; Kelly, M J; Stevenson, J O; Howard, A; Houston, J E; Tsao, S S

We describe a new electrochemical processing technique based on porous silicon formation that can produce surface and buried insulators, conductors, and sacrificial layers required for silicon micromachining to fabricate micromechanical devices and sensors. Porosity and thickness of porous silicon layers for micromachining can be controlled to a relative precision better than 0.3% for porosities ranging from 20--80% and thicknesses ranging from sub- micron to hundreds of microns. The technique of using porous silicon has important implications for microfabrication of silicon electromechanical devices and sensors. The high relative precision in realizing a given thickness is superior to that obtained with conventional chemical etches. 8 refs.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5947363
• Report Number(s): SAND-91-0910C; CONF-911047-3; ON: DE92005178
• Resource Relation: Conference: 180. meeting of the Electrochemical Society, Phoenix, AZ (United States), 13-18 Oct 1991
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
SILICON
ELECTROCHEMICAL MACHINING
ACCELEROMETERS
MICROSCOPES
POROUS MATERIALS
THICKNESS
CHEMICAL MACHINING
DIMENSIONS
ELEMENTS
MACHINING
MATERIALS
MEASURING INSTRUMENTS
SEMIMETALS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication
400400 - Electrochemistry