Plasma sintering of ultrafine amorphous Si sub 3 N sub 4

Journal Article · Fri Jan 01 04:00:00 EST 1988 · Advanced Ceramic Materials; (USA)

DOI:https://doi.org/10.1111/j.1551-2916.1988.tb00174.x· OSTI ID:5943101

Pan, Wen Xia; Sato, Michitaka; Yoshida, Toyonobu; Akashi, Kazuo ^[1]

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1. Univ. of Tokyo (Japan)

This study examines the sintering behavior of ultrafine amorphous Si{sub 3}N{sub 4} (30 nm) without additives in inductively coupled radio-frequency N{sub 2}H{sub 2} plasma generated under 100 Pa pressure. Plasma heating was rapid. The specimen heating rate could be >130{degree}C/s, which is advantageous for sintering processes. At this stage, no densification took place; however, the density, heating rate, firing temperature, and the oxidation of the powder strongly affected phase transitions, microstructure, and weight loss. These results suggest that the plasma-compact interaction probably plays an important role in specimen heating.

• OSTI ID: 5943101
• Journal Information: Advanced Ceramic Materials; (USA), Journal Name: Advanced Ceramic Materials; (USA) Vol. 3:1; ISSN 0883-5551; ISSN ACEME
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360202 -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
COHERENT SCATTERING
CRYSTAL STRUCTURE
DATA
DIFFRACTION
EXPERIMENTAL DATA
FABRICATION
INFORMATION
MEASURING METHODS
MICROSTRUCTURE
NITRIDES
NITROGEN COMPOUNDS
NUMERICAL DATA
PNICTIDES
SCATTERING
SILICON COMPOUNDS
SILICON NITRIDES
SINTERING
VERY HIGH PRESSURE
X-RAY DIFFRACTION