Chemical sputtering of silicon by F/sup +/, Cl/sup +/, and Br/sup +/ ions: Reactive spot model for reactive ion etching
Journal Article
·
· J. Vac. Sci. Technol., B; (United States)
Chemical sputtering yields of silicon resulting from the incidence of isotopically pure /sup 19/F/sup +/, /sup 35/Cl/sup +/, and /sup 81/Br/sup +/ ion beams were measured in the 100--3000 eV energy range. It is found for these cases that the chemical sputtering yields saturate in the high energy range of more than 600 eV. The saturated yields (atoms/ion) are 0.18 for F/sup +//Si, 0.45 for Cl/sup +//Si, and 0.23 for Br/sup +//Si. The yields increased with increasing ion energy in the 100--500 eV region with different slopes. The steepest slope is observed for the case of Br/sup +//Si, and the smallest is the F/sup +//Si case. This difference in the slope indicates that the chemical reaction between Br/sup +/ and Si cannot be activated without high acceleration of Br/sup +/, and the same occurs for Cl/sup +//Si. On the other hand the F/sup +/ ion is assumed to react with Si with a relatively high probability even when the energy is low. On the basis of these results, a reactive spot model is proposed for the ion-assisted chemical etching process. A generalized method to get anisotropic profiles is also presented for reactive ion etching of Si with fluorine-, chlorine-, and bromine-containing gases.
- Research Organization:
- Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan
- OSTI ID:
- 5935508
- Journal Information:
- J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 4:2; ISSN JVTBD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl{sup +} and Br{sup +} ion incidence in the presence of Cl and Br neutrals
Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr{sup +}
Atomistic simulations of Ar{sup +}-ion-assisted etching of silicon by fluorine and chlorine
Journal Article
·
Sun Dec 20 23:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:22493052
Classical interatomic potential model for Si/H/Br systems and its application to atomistic Si etching simulation by HBr{sup +}
Journal Article
·
Wed Jan 14 23:00:00 EST 2009
· Journal of Applied Physics
·
OSTI ID:21185977
Atomistic simulations of Ar{sup +}-ion-assisted etching of silicon by fluorine and chlorine
Journal Article
·
Fri Dec 31 23:00:00 EST 2004
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:20636953
Related Subjects
640301* -- Atomic
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BROMINE 81
BROMINE IONS
BROMINE ISOTOPES
CHARGED PARTICLES
CHEMICAL REACTION YIELD
CHEMICAL REACTIONS
CHLORINE 35
CHLORINE IONS
CHLORINE ISOTOPES
COLLISIONS
ELEMENTS
ETCHING
FLUORINE 19
FLUORINE IONS
FLUORINE ISOTOPES
INTERMEDIATE MASS NUCLEI
ION COLLISIONS
IONS
ISOTOPES
LIGHT NUCLEI
NUCLEI
ODD-EVEN NUCLEI
SEMIMETALS
SILICON
SPUTTERING
STABLE ISOTOPES
SURFACE FINISHING
YIELDS
Molecular & Chemical Physics-- Beams & their Reactions
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BROMINE 81
BROMINE IONS
BROMINE ISOTOPES
CHARGED PARTICLES
CHEMICAL REACTION YIELD
CHEMICAL REACTIONS
CHLORINE 35
CHLORINE IONS
CHLORINE ISOTOPES
COLLISIONS
ELEMENTS
ETCHING
FLUORINE 19
FLUORINE IONS
FLUORINE ISOTOPES
INTERMEDIATE MASS NUCLEI
ION COLLISIONS
IONS
ISOTOPES
LIGHT NUCLEI
NUCLEI
ODD-EVEN NUCLEI
SEMIMETALS
SILICON
SPUTTERING
STABLE ISOTOPES
SURFACE FINISHING
YIELDS