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Title: Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts

Patent ·
OSTI ID:5923933

This patent describes a photovoltaic cell comprising a p type CdTe semiconductor formed of tetrahedral structural crystalline host semiconductor material including Cd and Te atoms bonded by ionic, covalent and metallic forces. The nearest Cd and Te atoms of the host material have a known bond length, the CdTe host material being alloyed with a single type of atoms that replace about 0.1 of either some of the Cd or some of the Te atoms of the host material so that the alloyed and host atoms are bonded by at least covalent and metallic forces. The alloyed atoms have a bond length with the nearest neighboring host atoms that is less than the known host bond length. The number of bonded alloyed atoms are small compared to the number of bonded host atoms so as not to substantially affect electron conduction and optical properties of the host material. A p type semiconductor region has low dislocation density relative to the dislocation density of the CdTe is formed. An n type semiconductor forms a junction with the p type region, and separate first and second metal electrodes make ohmic contacts with the low dislocation density p type region and the n type region.

Assignee:
SRI International, Menlo, CA
Patent Number(s):
US 4568792
OSTI ID:
5923933
Resource Relation:
Patent File Date: Filed date 2 Feb 1984
Country of Publication:
United States
Language:
English