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R. f. -induced steps in mutually coupled, two-dimensional distributed Josephson tunnel junctions

Conference · · IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5922032
;  [1]
  1. Inst. of High-Frequency Engineering, Technical Univ. of Braunschweig, P.O. Box 3329, D-3302 Bad Salzdetfurth (DE)
+ Show Author Affiliations

This paper reports on the amplitudes of the current steps in the I-V characteristics of mutually coupled two-dimensional distributed Josephson tunnel junctions driven by microwaves. For this purpose we use a numerical computation algorithm based on a planar resonator model for the individual Josephson tunnel junctions to calculate the d.c. current density distribution. In addition to the fundamental microwave frequency, harmonic contents of the tunneling current are also considered. The lateral dimensions of the individual junctions are small compared to the microwave wavelength and the Josephson penetration depth, giving an almost constant current density distribution. Therefore, the coupled junctions can give much greater step amplitudes than a single junction with an equal tunneling area, because of their nonuniform current density distribution.

OSTI ID:
5922032
Report Number(s):
CONF-900944--
Journal Information:
IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Magnetics (Institute of Electrical and Electronics Engineers); (United States) Vol. 27:2; ISSN IEMGA; ISSN 0018-9464
Country of Publication:
United States
Language:
English

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Related Subjects

665411 -- Basic Superconductivity Studies-- (1992-)
665412* -- Superconducting Devices-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMPLITUDES
COMPUTER CALCULATIONS
COUPLING
CURRENT DENSITY
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
FLUX DENSITY
HARMONICS
JOSEPHSON JUNCTIONS
JUNCTION TRANSISTORS
JUNCTIONS
MICROWAVE RADIATION
OPTIMIZATION
OSCILLATIONS
PENETRATION DEPTH
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR DEVICES
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
TRANSISTORS
TUNNEL EFFECT
TWO-DIMENSIONAL CALCULATIONS