Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Simulation of Josephson junction in a microwave field

Journal Article · · J. Low Temp. Phys.; (United States)
DOI:https://doi.org/10.1007/BF00682150· OSTI ID:5916474

The resistively shunted junction (RSJ) model of a Josephson junction in a microwave field is studied using both analog and digital simulators. A comparison of the two methods shows very good agreement. Voltage-current characteristics of the Josephson junction in the low-frequency limit and their transition to chaotic behavior due to the punchthrough effect are investigated. The inverse ac effect on high-..beta../sub c/ junctions is simulated. Fractional inverse steps are found.

Research Organization:
Institute of Physics, Rez (Czechoslovakia)
OSTI ID:
5916474
Journal Information:
J. Low Temp. Phys.; (United States), Journal Name: J. Low Temp. Phys.; (United States) Vol. 72:5-6; ISSN JLTPA
Country of Publication:
United States
Language:
English