Microstrain in laser-crystallized silicon islands on fused silica
Residual strain in cw laser-crystallized silicon thin films has been measured with high spatial resolution (approx.5 ..mu..m) by Raman spectroscopy. Thin films of polycrystalline silicon were defined into moated islands and patterned stripes on fused silica substrates and encapsulated with silicon nitride. Raman scattering was used to measure local strain at various points in and near crystallized islands, and the results reveal that the silicon film is under tension. The observations indicate that a major component of the stress in the film arises from pinning of the silicon at the silicon-fused silica interface at the solidification temperature followed by differential thermal contraction.
- Research Organization:
- Xerox Palo Alto Research Center, Palo Alto, California 94304
- OSTI ID:
- 5906418
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:4; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
CHALCOGENIDES
CRYSTALLIZATION
CRYSTALS
DIMENSIONS
ELEMENTS
FILMS
HEATING
INTERFACES
LASER-RADIATION HEATING
MELTING POINTS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PLASMA HEATING
PNICTIDES
POLYCRYSTALS
RADIATION EFFECTS
RAMAN EFFECT
RAMAN SPECTRA
RESOLUTION
SCATTERING
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
SPATIAL RESOLUTION
SPECTRA
STRAINS
STRESSES
SUBSTRATES
THERMODYNAMIC PROPERTIES
THICKNESS
TRANSITION TEMPERATURE