Development of high-quantum-efficiency, lattice-mismatched, 1. 0-eV GaInAs solar cells
Journal Article
·
· Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States)
- Varian Associates, Palo Alto, CA (United States)
- National Renewable Energy Lab., Golden, CO (United States)
High-quantum-efficiency, lattice-mismatched, 1.0-eV GaInAs solar cells grown by organometallic vapor phase epitaxy have been developed for ultimate integration into AlGaAs/GaAs/GaInAs 3-junction, 2-terminal monolithic devices. The more standard n/p junction was replaced with an n-i-p structure in the GaInAs cell in order to increase the short-circuit current by overcoming the material deficiencies which arise as a result of accommodating the lattice mismatch. This led to single junction 1.0-eV GaInAs cells with internal quantum efficiencies >90% and short-circuit-current densities that match or closely approach those needed to current match the upper AlGaAs and GaAs cells. A 4.1% (1-sun, air mass 0, 25[degrees]C) power conversion efficiency was achieved with a developmental structure, indicating the potential of the lattice-mismatched n-i-p 1.0-eV GaInAs cell. An analogous device designed to allow direct monolithic integration with the upper AlGaAs and GaAs cells, with a modified grading layer of AlGaInAs in place of the usual GaInAs, achieved an efficiency of 2.2%, primarily due to a lower open-circuit voltage. The open-circuit voltage is perhaps limited by structural defects revealed in transmission electron micrographs. 26 refs., 7 figs., 2 tabs.
- OSTI ID:
- 5902024
- Journal Information:
- Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States), Journal Name: Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States) Vol. 22:7; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360600 -- Other Materials
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
EFFICIENCY
EPITAXY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
MATERIALS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
VAPOR PHASE EPITAXY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360600 -- Other Materials
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
EFFICIENCY
EPITAXY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
MATERIALS
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
VAPOR PHASE EPITAXY