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U.S. Department of Energy
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Preparation and characterization of hydrogenated amorphous boron thin films and thin film solar cells produced by glow discharge decomposition methods. Third quarterly progress report, July 1, 1979-September 30, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5901557· OSTI ID:5901557
This quarterly report is an account of recent progress in our program to produce hydrogenated amorphous boron thin films, to characterize these films, and to produce and evaluate solar cells from such amorphous boron films. In exact analogy with the situation previously existing for amorphous silicon, amorphous boron, without hydrogenation, has poor semiconducting properties due to defect states in the band gap. The decomposition of diborane, penataborane, and/or decarborane to produce thin films can reasonably be expected to result in amorphous boron thin films containing substantial quantities of hydrogen. The current program aims directly at the growth and doping of such hydrogenated amorphous boron thin films, the evaluation and optimization of their semiconductor properties, and the fabrication and testing of thin film solar cells from them. Both intrinsic and doped a-boron thin films have been produced. Film characterization efforts have been primarily focused on controlling the optical band gap by annealing the as-deposited films in vacuum at 400/sup 0/C, and measuring the resulting optical gap as a function of bake-out time. Because the optical band gap of a-boron has been observed to vary from 0.8 eV to over 2.0 eV as a function of hydrogenation, it should be possible, by controlled annealing, to obtain a-boron films with an optimal band gap of 1.45 eV. In addition, work is nearing completion on the cryostat which will be used to measure the electrical gaps of our a-boron films.
Research Organization:
Duke Univ., Durham, NC (USA). Dept. of Mechanical Engineering and Materials Science
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-79ET23041
OSTI ID:
5901557
Report Number(s):
DOE/ET/23041-3
Country of Publication:
United States
Language:
English