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Spin--orbit scattering of electrons in disordered indium films containing hydrogen impurity

Journal Article · · Sov. Phys. - Solid State (Engl. Transl.); (United States)
OSTI ID:5897141
The influence of a perpendicular magnetic field H on the temperature dependence R(T) of the resistance and on the superconducting transition temperature T/sub c/ below 20 K was studied for high-resistivity (R/sub D'Alembertian/ >1 k..cap omega..) indium films formed by simultaneous deposition of the metal and hydrogen on a substrate cooled to approx.5 K. For T>2T/sub c/, the films had a slight negative dependence R(T) in agreement with weak localization and electron--electron interaction theories. Analysis of the R(T, H) curves according to these theories gave the electron phase relaxation time tau/sub phi/(T) and an estimate of the electron spin relaxation time tau/sub s/o due to the spin--orbit interaction. As regards superconducting properties, the films were zero-dimensional; this was shown both by the temperature dependence of the fluctuational conductivity above T/sub c/ and by the dependence T/sub c/(H). In addition to orbital effects, the latter showed the direct influence of the spin--orbit interaction, which provided another estimate of tau/sub s/o; this was found to be approximately the same as given by R(T, H).
Research Organization:
Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
OSTI ID:
5897141
Journal Information:
Sov. Phys. - Solid State (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Solid State (Engl. Transl.); (United States) Vol. 26:10; ISSN SPSSA
Country of Publication:
United States
Language:
English