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Title: Absolute thermal expansion measurements of single-crystal silicon in the range 300-1,300 K with an interferometric dilatometer

Conference · · Int. J. Thermophys.; (United States)
OSTI ID:5890459

The thermal expansion coefficient of single-crystal silicon has been measured in the range 300-1300 K using an interferometric dilatometer. The measurement system consists of a double-path optical heterodyne interferometer and a radiant image furnace with a quartz vacuum tube, which provides both accuracy and rapidity of measurement. The uncertainties in length and temperature determination are within 4 nm and 0.4 K, respectively. A high-purity dislocation-free FZ silicon single crystal was used in the study. Thermal expansion coefficients of silicon oriented in the (111) direction have been determined over the temperature range from 300 to 1300 K. The standard deviation of the measurement data from the best fitting for the fifth-order polynominal in temperature is 2.1 /times/ 10/sup /minus/8/ K/sup /minus/1/. The present value for the thermal expansion coefficient agrees with 9 /times/ 10/sup /minus/8/ K/sup /minus/1/ with the interferometric measurement of polycrystalline pure silicon by Roberts (1981) between 300 and 800 K and within 1.2 /times/ 10/sup /minus/7/ K/sup /minus/1/ with the single-crystal diffractometric measurement by Okada and Tokumaru (1984) between 300 and 1300 K.

Research Organization:
National Research Lab. of Metrology, Ibaraki (Japan)
OSTI ID:
5890459
Report Number(s):
CONF-880606-
Journal Information:
Int. J. Thermophys.; (United States), Vol. 9:6; Conference: 10. symposium on thermophysical properties, Gaithersburg, MD, USA, 20-23 Jun 1988
Country of Publication:
United States
Language:
English