High-resolution imaging of semiconductor interfaces by Z-contrast STEM

Conference · Sat Dec 31 23:00:00 EST 1988

OSTI ID:5884706

Pennycook, S J; Jesson, D E; Chisholm, M F

A new technique for high-resolution electron microscopy is described using a high-angle annular detector in a STEM. The use of highly localized electron scattering gives the images strong chemical sensitivity and many of the characteristics associated with incoherent imaging; there are no contrast reversals with defocus or sample thickness, no Fresnel fringe effects at interfaces, no lateral spreading of lattice fringes, and no contrast from within an amorphous phase. Column by column compositional sensitivity is achieved, even at interfaces, and rigid shifts are independent of thickness and defocus. 25 refs., 5 figs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5884706
• Report Number(s): CONF-890462-1; ON: DE89015915
• Country of Publication: United States
• Language: English

Related Subjects

440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
AMORPHOUS STATE
COBALT COMPOUNDS
COBALT SILICATES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
GERMANIUM
INTERFACES
MATERIALS
METALS
MICROSCOPY
OXYGEN COMPOUNDS
RUTHERFORD SCATTERING
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICATES
SILICON
SILICON COMPOUNDS
TRANSITION ELEMENT COMPOUNDS