Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing
- Lawrence Berkeley National Laboratory, Berkeley, California (United States) 94720
High-resolution electron microscopy was employed to study the atomic structure of As precipitates formed in low-temperature GaAs during high-temperature annealing. Almost all the precipitates after annealing at 850 and 950{degree}C were found to be twinned with a {l_brace}{bar 1}104{r_brace} crystallographic twin plane. Twinning is associated with the crystallization of amorphous or liquidlike As precipitates during cooling. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {l_brace}111{r_brace}B plane of GaAs. Twin formation usually initiates on the long facet bounded by the {l_brace}111{r_brace}A plane. The crystallization usually terminated with a void because of the shrinkage of the As volume during solidification. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 587108
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 72; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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