Interdigitated gate electrode field effect transistor for the selective detection of nitrogen dioxide and diisopropyl methylphosphonate
Journal Article
·
· Analytical Chemistry (Washington); (USA)
- Wright-Patterson Air Force Base, Dayton, OH (USA)
An interdigitated gate electrode field effect transistor (IGE-FET) coupled to an electron beam evaporated copper phthalocyanine thin film was used to selectively detect part-per-billion concentration levels of nitrogen dioxide (NO{sub 2}) and diisopropyl methylphosphonate (DIMP). The sensor is excited with a voltage pulse, and the time- and frequency-domain responses are measured. The envelopes of the magnitude of the normalized difference frequency spectrums reveal features that unambiguously distinguish NO{sub 2} and DIMP exposures.
- OSTI ID:
- 5869656
- Journal Information:
- Analytical Chemistry (Washington); (USA), Journal Name: Analytical Chemistry (Washington); (USA) Vol. 61:21; ISSN 0003-2700; ISSN ANCHA
- Country of Publication:
- United States
- Language:
- English
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