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Interdigitated gate electrode field effect transistor for the selective detection of nitrogen dioxide and diisopropyl methylphosphonate

Journal Article · · Analytical Chemistry (Washington); (USA)
DOI:https://doi.org/10.1021/ac00196a008· OSTI ID:5869656
;  [1]
  1. Wright-Patterson Air Force Base, Dayton, OH (USA)
An interdigitated gate electrode field effect transistor (IGE-FET) coupled to an electron beam evaporated copper phthalocyanine thin film was used to selectively detect part-per-billion concentration levels of nitrogen dioxide (NO{sub 2}) and diisopropyl methylphosphonate (DIMP). The sensor is excited with a voltage pulse, and the time- and frequency-domain responses are measured. The envelopes of the magnitude of the normalized difference frequency spectrums reveal features that unambiguously distinguish NO{sub 2} and DIMP exposures.
OSTI ID:
5869656
Journal Information:
Analytical Chemistry (Washington); (USA), Journal Name: Analytical Chemistry (Washington); (USA) Vol. 61:21; ISSN 0003-2700; ISSN ANCHA
Country of Publication:
United States
Language:
English