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U.S. Department of Energy
Office of Scientific and Technical Information

Thin film technology of high-critical-temperature superconducting electronics. Annual report, 1 November 1983-31 October 1984

Technical Report ·
OSTI ID:5866384

During the second year of performance under this program, the atomic segregation on A15 surfaces was evaluated and resulted in Nb/sub 3/Sn replacing V/sub 3/Si as the tunnel junction this program, the atomic segregation on A15 surfaces was evaluated and resulted in Nb3Sn replacing V3Si as the tunnel junction high-T/sub c/ base electrode. A process of all-refractory test junction patterning by wet and/or reactive ion etching was implemented. Epitaxial, textured tunnel-barrier structures of the form Al/Al/sub 2/O/sub 3/, Y/Y/sub 2/O/sub 3/, and Al/Al/sub 2/O/sub 3//Al, were fabricated. Tunnel junctions with Nb, Nb/sub 3/Sn, and Mo-Re base and Pb-Bi counterelectrodes have been formed with the barrier structures and had excellent I-V characteristics. Junctions with Nb counterelectrodes exhibited high subgap leakage currents. The Mo(65)Re(35) alloy was found to be an ideal material for counterelectrodes having T/sub c/=12K.

Research Organization:
Westinghouse Electric Corp., Pittsburgh, PA (USA). Research and Development Center
OSTI ID:
5866384
Report Number(s):
AD-A-150010/7/XAB
Country of Publication:
United States
Language:
English