Thin film technology of high-critical-temperature superconducting electronics. Annual report, 1 November 1983-31 October 1984
During the second year of performance under this program, the atomic segregation on A15 surfaces was evaluated and resulted in Nb/sub 3/Sn replacing V/sub 3/Si as the tunnel junction this program, the atomic segregation on A15 surfaces was evaluated and resulted in Nb3Sn replacing V3Si as the tunnel junction high-T/sub c/ base electrode. A process of all-refractory test junction patterning by wet and/or reactive ion etching was implemented. Epitaxial, textured tunnel-barrier structures of the form Al/Al/sub 2/O/sub 3/, Y/Y/sub 2/O/sub 3/, and Al/Al/sub 2/O/sub 3//Al, were fabricated. Tunnel junctions with Nb, Nb/sub 3/Sn, and Mo-Re base and Pb-Bi counterelectrodes have been formed with the barrier structures and had excellent I-V characteristics. Junctions with Nb counterelectrodes exhibited high subgap leakage currents. The Mo(65)Re(35) alloy was found to be an ideal material for counterelectrodes having T/sub c/=12K.
- Research Organization:
- Westinghouse Electric Corp., Pittsburgh, PA (USA). Research and Development Center
- OSTI ID:
- 5866384
- Report Number(s):
- AD-A-150010/7/XAB
- Country of Publication:
- United States
- Language:
- English
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360104 -- Metals & Alloys-- Physical Properties
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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
BETA-W LATTICES
CHALCOGENIDES
CRITICAL TEMPERATURE
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRODES
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
FILMS
HIGH TEMPERATURE
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
MOLYBDENUM ALLOYS
NIOBIUM
NIOBIUM ALLOYS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RHENIUM ALLOYS
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
THERMODYNAMIC PROPERTIES
TIN ALLOYS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRANSITION TEMPERATURE
TUNNEL EFFECT
YTTRIUM
YTTRIUM COMPOUNDS
YTTRIUM OXIDES