Thin film technology of high-critical-temperature superconducting electronics. Annual report, 1 November 1983-31 October 1984
Technical Report
·
OSTI ID:5866384
During the second year of performance under this program, the atomic segregation on A15 surfaces was evaluated and resulted in Nb/sub 3/Sn replacing V/sub 3/Si as the tunnel junction this program, the atomic segregation on A15 surfaces was evaluated and resulted in Nb3Sn replacing V3Si as the tunnel junction high-T/sub c/ base electrode. A process of all-refractory test junction patterning by wet and/or reactive ion etching was implemented. Epitaxial, textured tunnel-barrier structures of the form Al/Al/sub 2/O/sub 3/, Y/Y/sub 2/O/sub 3/, and Al/Al/sub 2/O/sub 3//Al, were fabricated. Tunnel junctions with Nb, Nb/sub 3/Sn, and Mo-Re base and Pb-Bi counterelectrodes have been formed with the barrier structures and had excellent I-V characteristics. Junctions with Nb counterelectrodes exhibited high subgap leakage currents. The Mo(65)Re(35) alloy was found to be an ideal material for counterelectrodes having T/sub c/=12K.
- Research Organization:
- Westinghouse Electric Corp., Pittsburgh, PA (USA). Research and Development Center
- OSTI ID:
- 5866384
- Report Number(s):
- AD-A-150010/7/XAB
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin-film technology of high-critical-temperature superconducting electronics. Final report, 1 August 1982-30 September 1985
Crystalline oxide tunnel barriers formed by thermal oxidation of aluminum overlayers on superconductor surfaces
Thin film technology of high-critical-temperature superconducting electronics. Annual report 1 Aug 82-30 Oct 83
Technical Report
·
Tue Dec 10 23:00:00 EST 1985
·
OSTI ID:5888525
Crystalline oxide tunnel barriers formed by thermal oxidation of aluminum overlayers on superconductor surfaces
Journal Article
·
Mon Sep 15 00:00:00 EDT 1986
· J. Appl. Phys.; (United States)
·
OSTI ID:5393289
Thin film technology of high-critical-temperature superconducting electronics. Annual report 1 Aug 82-30 Oct 83
Technical Report
·
Sun Dec 04 23:00:00 EST 1983
·
OSTI ID:6830658
Related Subjects
36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
BETA-W LATTICES
CHALCOGENIDES
CRITICAL TEMPERATURE
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRODES
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
FILMS
HIGH TEMPERATURE
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
MOLYBDENUM ALLOYS
NIOBIUM
NIOBIUM ALLOYS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RHENIUM ALLOYS
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
THERMODYNAMIC PROPERTIES
TIN ALLOYS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRANSITION TEMPERATURE
TUNNEL EFFECT
YTTRIUM
YTTRIUM COMPOUNDS
YTTRIUM OXIDES
360104 -- Metals & Alloys-- Physical Properties
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALLOYS
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
BETA-W LATTICES
CHALCOGENIDES
CRITICAL TEMPERATURE
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRODES
ELECTRONIC CIRCUITS
ELEMENTS
FABRICATION
FILMS
HIGH TEMPERATURE
JOSEPHSON JUNCTIONS
JUNCTIONS
METALS
MOLYBDENUM ALLOYS
NIOBIUM
NIOBIUM ALLOYS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RHENIUM ALLOYS
SUPERCONDUCTING FILMS
SUPERCONDUCTING JUNCTIONS
THERMODYNAMIC PROPERTIES
TIN ALLOYS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TRANSITION TEMPERATURE
TUNNEL EFFECT
YTTRIUM
YTTRIUM COMPOUNDS
YTTRIUM OXIDES