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Title: Sideband development in a high-power traveling-wave tube microwave amplifier

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104470· OSTI ID:5858722
; ; ; ;  [1]
  1. Laboratory of Plasma Studies and School of Electrical Engineering, Cornell University, Ithaca, New York 14853 (USA)

The work presented describes the characteristics of single stage and severed high-efficiency, high-power traveling-wave tube amplifiers operating in {ital X} band at 8.76 GHz. Average amplified output powers of 210 MW have been achieved at 24% efficiency. At high output power levels ({gt}100 MW) sidebands develop increasing the average radiated power to over 400 MW with a microwave conversion efficiency of over 45%. In single frequency operation phase stability to within {plus minus}8{degree} has been demonstrated.

OSTI ID:
5858722
Journal Information:
Applied Physics Letters; (USA), Vol. 58:9; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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