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Temperature dependence of radiation damage and its annealing in silicon detectors

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5857875
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  1. Los Alamos National Lab., NM (United States)
  2. Univ. of California, Santa Cruz, CA (United States). Santa Cruz Inst. for Particle Physics
  3. Univ. of California, Riverside, CA (United States)
  4. Univ. of Missouri, Rolla, MO (United States)
  5. Univ. of New Mexico, Albuquerque, NM (United States)
The radiation damage resulting from the large particle fluences predicted at the Superconducting Super Collider will induce significant leakage currents in silicon detectors. In order to limit those currents, the authors plan to operate the detectors at reduced temperatures ([approximately] 0 C). In this paper, they present the results of a study of temperature effects on both the initial radiation damage and the long-term annealing of that damage in silicon PIN detectors. Depletion voltage results are reported. The detectors were exposed to approximately 10[sup 14]/cm[sup 2] 650 MeV protons. Very pronounced temperature dependencies were observed.
OSTI ID:
5857875
Report Number(s):
CONF-921005--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 40:4 part 1
Country of Publication:
United States
Language:
English