Effect of defect production rate on radiation-induced segregation

Journal Article · Thu Dec 31 23:00:00 EST 1981 · Scr. Metall.; (United States)

DOI:https://doi.org/10.1016/0036-9748(82)90286-1· OSTI ID:5857843

Rehn, L E; Okamoto, P R; Averback, R S; Wagner, W; Wiedersich, H

Irradiation at elevated temperatures can induce precipitate phases in normally stable, solid-solution alloys, and alter the morphology and spatial distribution of precipitates in multiphase alloys. Radiation-induced segregation (RIS) is frequently responsible for these phase instabilities. RIS occurs because persistent fluxes of point defects generated by the irradiation transport alloying components in proportions which in general, are different from those prevailing locally in the alloy. The alloy concentration is therefore altered in regions which experience a net influx of defects, e.g., regions near defect sinks. RIS of silicon toward defect sinks in binary nickel-base alloys is particularly strong, and has been studied by several groups.

• Research Organization: Argonne National Lab., IL
• OSTI ID: 5857843
• Journal Information: Scr. Metall.; (United States), Journal Name: Scr. Metall.; (United States) Vol. 16; ISSN SCRMB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
ALLOYS
DEFECTS
NICKEL ALLOYS
NICKEL BASE ALLOYS
PHASE STUDIES
PRECIPITATION
RADIATION EFFECTS
SEGREGATION
SEPARATION PROCESSES
SILICON ALLOYS