Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Novel thin-film CuInSe/sub 2/ fabrication: Final subcontract report, January 1989

Technical Report ·
OSTI ID:5856011
This work studies the feasibility of fabricating CuInSe/sub 2/ (CIS) solar cells by laser annealing sandwiched layers of elemental Cu, In, and Se. The chalcopyrite phase of CIS now is obtained by thermal annealing elemental Cu and In layers in H/sub 2/Se. This process is hazardous because the H/sub 2/Se gas is highly toxic. The ability to form the desired chalcopyrite structure by laser annealing would be safer and more conductive to large-scale production. Initial studies of the feasibility of laser annealing the elemental layered structures were performed using a CW argon laser on films fabricated by means of electrodeposition. Characterization of the post-annealed films by x-ray diffraction analysis has shown encouraging results. The laser annealed films have all contained the chalcopyrite phase of CIS. The percentage of the chalcopyrite phase has been small however. Undesirable binary oxides have also formed. To produce higher quality films, future work will concentrate on increasing the percentage of the desirable phase and eliminating all binary compounds. 5 refs., 4 figs., 1 tab.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Arkansas Univ., Fayetteville, AR (USA). J. William Fulbright Coll. of Arts and Sciences
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5856011
Report Number(s):
SERI/STR-211-3529; ON: DE89009440
Country of Publication:
United States
Language:
English