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Low-cost technique for producing Cd/sub 1/minus/x/Zn/sub x/Te devices for cascade cell application: Final subcontract report, 1 June 1987--15 December 1988

Technical Report ·
DOI:https://doi.org/10.2172/5855663· OSTI ID:5855663
This report contains results on research into a low-cost technique for producing Cd/sub 1/minus/x/Zn/sub x/Te devices for cascade cell application. Specifically, the work investigated a two-stage process for producing Cd/sub 1/minus/x/Zn/sub x/Te devices with a transparent contact and a band gap of about 1.7 eV. The two-stage technique involves depositing thin films of Cd, Zn, and Te in the form of stacked layers, and then heating the layers to form the compound. The feasibility of the technique was demonstrated. Extrinsic doping of the films was achieved. Transparent ZnTe film having low resistivity that will be useful as transparent ohmic contacts to the layers were obtained. Solar cells processed by the two-stage technique were demonstrated. 11 refs., 8 figs., 1 tab.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); International Solar Electric Technology, Inglewood, CA (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5855663
Report Number(s):
SERI/STR-211-3522; ON: DE89009433
Country of Publication:
United States
Language:
English