Defects in synthetic quartz: Radiation-induced mobility of interstitial ions
Journal Article
·
· J. Appl. Phys.; (United States)
Electron-spin resonance (ESR) has been used to investigate defect formation, anneal, and migration effects in commercially available high-quality synthetic quartz. Electronic-Grade and premium Q material, both unswept and swept, were included in the study and an electron accelerator was used for all irradiations. Previously unreported holelike and electronlike paramagnetic defects have been observed and their production and decay properties are described. The concentration of aluminum-associated trapped hole centers (now known as (Al/sub e/+)/sup 0/ centers) was found to be a strong function of irradiation temperature and previous electrodiffusion (sweeping) treatments. Irradiation of an as-received unswept sample at 77 K produced very few (Al/sub e/+)/sup 0/ centers. If the same unswept sample was irradiated at room temperature and then reirradiated at 77 K, the (Al/sub e/+)/sup 0/ center concentration was enhanced by one to two orders of magnitude. The intermediate irradiation at room temperature is believed to remove interstitial Na/sup +/ ions from the vicinity of the substitutional aluminum ions and thus allow the aluminum ions to trap holes during the second 77 K irradiation. The onset of the radiation-induced mobility of the Na/sup +/ ions occurs between 200 and 250 K. An intense (Al/sub e/+)/sup 0/ center ESR spectrum was found after the initial 77 K irradiation of the as-received commercially swept samples, and the intermediate room-temperature irradiation caused no enhancement of the spectrum during a subsequent reirradiation at 77 K. This suggests that radiation-induced mobility of hydrogen ions occurs at 77 K. As an application of these results, a sensitive testing procedure is described for measuring the extent to which the interstitial Na/sup +/ ions have been removed from a synthetic quartz sample by the commercial sweeping process.
- Research Organization:
- Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74074
- OSTI ID:
- 5847575
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:12; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
A study of the defects produced by the irradiation of quartz. Final technical report 15 May 77-30 Nov 79
Defect characterization in quartz and related materials. Final report, April-December 1983
Radiation effects in crystalline SiO/sub 2/: the role of aluminum
Technical Report
·
Mon Mar 31 23:00:00 EST 1980
·
OSTI ID:6935767
Defect characterization in quartz and related materials. Final report, April-December 1983
Technical Report
·
Mon Jun 01 00:00:00 EDT 1987
·
OSTI ID:5974793
Radiation effects in crystalline SiO/sub 2/: the role of aluminum
Journal Article
·
Fri May 01 00:00:00 EDT 1981
· J. Appl. Phys.; (United States)
·
OSTI ID:6456740
Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ACCELERATORS
ALUMINIUM
ANNEALING
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPIN RESONANCE
ELEMENTS
HEAT TREATMENTS
HOLES
INTERSTITIALS
IONS
LOW TEMPERATURE
MAGNETIC RESONANCE
MAGNETISM
MEDIUM TEMPERATURE
METALS
MOBILITY
OXIDES
OXYGEN COMPOUNDS
PARAMAGNETISM
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
QUANTITY RATIO
QUARTZ
RADIATION EFFECTS
RESONANCE
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE DEPENDENCE
TRAPPING
360605* -- Materials-- Radiation Effects
ACCELERATORS
ALUMINIUM
ANNEALING
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON SPIN RESONANCE
ELEMENTS
HEAT TREATMENTS
HOLES
INTERSTITIALS
IONS
LOW TEMPERATURE
MAGNETIC RESONANCE
MAGNETISM
MEDIUM TEMPERATURE
METALS
MOBILITY
OXIDES
OXYGEN COMPOUNDS
PARAMAGNETISM
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
QUANTITY RATIO
QUARTZ
RADIATION EFFECTS
RESONANCE
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE DEPENDENCE
TRAPPING