Plasma-enhanced chemical vapor deposition of low-resistive tungsten thin films

Journal Article · Sun Feb 24 23:00:00 EST 1991 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104505· OSTI ID:5846161

Kim, Y T; Min, S; Hong, J S ^[1]; Kim, C K ^[2]

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1. Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea (KR)
2. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, P.O. Box 135, Dongdaemun, Seoul (Korea)

Controlling the wafer temperatures from 200 to 500 {degree}C at H{sub 2}/WF{sub 6} flow ratio equal to 24, low-resistive (about 11 {mu}{Omega} cm) tungsten thin films are deposited by plasma-enhanced chemical vapor deposition. The as-deposited tungsten films have (110), (200), and (211) oriented bcc structures and Auger depth profile shows that fluorine and oxygen impurities are below the detection limit of Auger electron spectroscopy.

• OSTI ID: 5846161
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 58:8; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
IMPURITIES
METALS
PHYSICAL PROPERTIES
SURFACE COATING
TRANSITION ELEMENTS
TUNGSTEN