Growth rate enhancement of heavy n- and p-type doped silicon deposited by atmospheric-pressure chemical vapor deposition at low temperatures

Journal Article · Wed Sep 01 00:00:00 EDT 1993 · Journal of the Electrochemical Society; (United States)

DOI:https://doi.org/10.1149/1.2220890· OSTI ID:5841412

Agnello, P D; Sedgwick, T O; Cotte, J ^[1]

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1. IBM T.J. Watson Research Center, Yorktown Heights, NY (United States)

N and p-Type doping of epitaxially grown Si over the temperature range from 850 C to as low as 550 C was investigated in an atmospheric pressure reactor. P, As, and B could be incorporated into single-crystal silicon at levels exceeding the solid solubility at growth temperatures to levels greater than 1 [times] 10[sup 20]/cm[sup 3]. Remarkably, each of the hydride dopant sources, PH[sub 3], AsH[sub 3], and B[sub 2]H[sub 6], dramatically enhanced the growth rate of Si from dichlorosilane (DCS) at lower temperatures. Such results are unprecedented for the growth of Si from dichlorosilane (DCS) at lower temperature. Such results are unprecedented for the growth of Si from dichlorosilane ((DCS) which has been restricted to higher growth temperatures until recently) and for growth from SiH[sub 4] (which has been practiced over a wide range of temperatures). Growth was carried out primarily from DCS in H[sub 2] carrier gas, although some experiments utilizing SiH[sub 4] were performed, in order to explore the mechanisms responsible for growth rate enhancement of doped films. Instrumental in achieving these results has been the ultraclean, load-locked atmospheric pressure reactor, which permits high-quality epitaxial growth at temperatures no previously obtainable with DCS. Thus utilizing conventional Si and dopant sources in an unconventional regime, doping behavior suitable for advanced device structures was obtained.

• OSTI ID: 5841412
• Journal Information: Journal of the Electrochemical Society; (United States), Vol. 140:9; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
CHEMICAL VAPOR DEPOSITION
ARSENIC
BORON
CHEMICAL REACTION KINETICS
CRYSTAL GROWTH
DOPED MATERIALS
PHOSPHORUS
SILANES
CHEMICAL COATING
DEPOSITION
ELEMENTS
HYDRIDES
HYDROGEN COMPOUNDS
KINETICS
MATERIALS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
REACTION KINETICS
SEMIMETALS
SILICON COMPOUNDS
SURFACE COATING
360601* - Other Materials- Preparation & Manufacture