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Model of magnetically enhanced, capacitive RF discharges

Journal Article · · IEEE Transactions on Plasma Science (Institute of Electrical and Electronics Engineers); (United States)
DOI:https://doi.org/10.1109/27.106813· OSTI ID:5827707
;  [1]
  1. California Univ., Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
Magnetically enhanced, capacitive RF discharges (so-called RF magnetrons or MERIE discharges) are playing an increasing role in thin film etching for integrated circuit processing. In these discharges, a weak dc magnetic field is imposed, lying parallel to the powered electrode surface. The authors determine the RF power transferred to the discharge electrons by the oscillating electron sheath in the presence of the magnetic field. Using this, along with particle and energy conservation, the authors obtain discharge parameters such as the ion flux and ion bombarding energy at the powered electrode as functions of pressure, RF power, and the magnetic field. This paper reports that some results of the model show good agreement with experiments done on a commercial MERIE system.
Sponsoring Organization:
NSF; National Science Foundation, Washington, DC (United States)
OSTI ID:
5827707
Journal Information:
IEEE Transactions on Plasma Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Plasma Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 19:2; ISSN ITPSB; ISSN 0093-3813
Country of Publication:
United States
Language:
English

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