Some recent silicon detector spectroscopy applications at the Lawrence Berkeley Laboratory
The development and fabrication of specialized silicon detectors have long been an integral part of the LBL experimental capabilities. This silicon detector expertise utilizes two basic technologies, oxide-passivated diffused junction and lithium-ion drift. These technologies are complementary, with detectors of 10 {mu}m to 500 {mu}m thick fabricated using the diffused junction process and detectors 500 {mu}m to 10,000 {mu}m using the lithium-ion technique. Particle spectroscopy applications at LBL typically employ a thin diffused, dE/dx, detector followed by a thick lithium drifted, E, detector. Novel position-sensitive dE/dx and E detectors recently employed in two separate experiments conducted at LBL are described. In addition, the requirements for employing thick lithium drifted detectors in an ongoing LBL double beta decay experiment and a LBL dark matter search are also presented. 22 refs.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- DOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5826460
- Report Number(s):
- LBL-31272; ON: DE92009490
- Country of Publication:
- United States
- Language:
- English
Similar Records
SEMICONDUCTOR NUCLEAR RADIATION DETECTORS
P-type silicon drift detectors
Related Subjects
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELEMENTS
LI-DRIFTED DETECTORS
LI-DRIFTED SI DETECTORS
MEASURING INSTRUMENTS
PERFORMANCE
POSITION SENSITIVE DETECTORS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SI SEMICONDUCTOR DETECTORS
SILICON
SPECTROSCOPY