Formation of silicides by rapid thermal annealing over polycrystalline silicon
We have investigated the formation of titanium silicide by rapid thermal annealing in nitrogen and argon ambients over polycrystalline silicon. A sheet resistance of about 3 ..cap omega.. per square for a 300-A Ti layer was achieved after 900 /sup 0/C/10-s annealing treatment, which decreased to about 2 ..cap omega.. per square after 1100 /sup 0/C/10-s treatment. The silicides were found to be stable during rapid thermal annealing up to 1100 /sup 0/C/10 s with no or negligible migration of titanium along the grain boundaries in polycrystalline silicon. An external layer (titanium rich, mixture of titanium oxide and nitride) was observed to form during rapid thermal annealing treatment in the nitrogen ambient, but the surface remained clean in the argon ambient.
- Research Organization:
- Materials Engineering Department, North Carolina State University, Raleigh, North Carolina 27695
- OSTI ID:
- 5822035
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:2; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
High sheet resistance, arsenic implanted polycrystalline silicon for integrated circuit resistors
Dopant diffusion in tungsten silicide
Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
ANNEALING
ARGON
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
CRYSTALS
DEPOSITION
DIFFUSION
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FLUIDS
GASES
HEAT TREATMENTS
METALS
MIGRATION
MINERALS
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NONMETALS
OXIDATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
POLYCRYSTALS
RARE GASES
SEMIMETALS
SILICA
SILICIDES
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
SYNTHESIS
THICKNESS
TITANIUM
TITANIUM COMPOUNDS
TITANIUM NITRIDES
TITANIUM OXIDES
TITANIUM SILICIDES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS