Evidence for germanium segregation on thin films of Ag on Ge(111)
Journal Article
·
· Phys. Rev. B: Condens. Matter; (United States)
Ag films prepared on Ge(111) at nearly room temperature were studied with high-resolution core-level photoemission spectroscopy. By selectively modifying the sample structure to label surface sites on the Ag film, we unambiguously identified the presence of a small amount of Ge segregating on top on the growing Ag overlayer. The origin and behavior of these segregated atoms and the structure of the overlayer are discussed.
- Research Organization:
- Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 5820653
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 33:12; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
Similar Records
Photoemission studies of the initial adsorption and growth of Ag on Ge(111)
Photoemission study of Si(111)-Ge(5 x 5) surfaces
Surface electronic structure of polar NiO thin film grown on Ag(111)
Conference
·
Tue Mar 31 23:00:00 EST 1987
·
OSTI ID:6879017
Photoemission study of Si(111)-Ge(5 x 5) surfaces
Journal Article
·
Thu May 15 00:00:00 EDT 1986
· Phys. Rev. B: Condens. Matter; (United States)
·
OSTI ID:5773364
Surface electronic structure of polar NiO thin film grown on Ag(111)
Journal Article
·
Wed Jun 24 00:00:00 EDT 2015
· AIP Conference Proceedings
·
OSTI ID:22490394