Effect of silane pressure on silane-hydrogen RF glow discharge
Journal Article
·
· IEEE Trans. Plasma Sci.; (United States)
The intensity and time dependence of optical emission from silane and silane-hydrogen radio-frequency (RF) discharges have been measured as a function of silane pressure (0.05-1.0 torr). The rate of emission of H and Si resulting from dissociative excitation was found to decrease with increasing silane pressure in a manner consistent with a similar decrease in average electron energy. Results from a Monte Carlo plasma simulation code were used to compute the rate of optical emission. Comparison of theory and experiment shows good agreement for emission intensities and confirms for discharges operating at constant pressure and power density a decrease in electron density and average electron energy with increasing silane partial pressure in mixtures of silane and hydrogen. The time-dependent spatially averaged emission intensity of H is experimentally nonsymmetric with a shape that is a systematic function of silane partial pressure. This systematic behavior is reproduced by the plasma simulation and is attributed to the change in the dc bias of the powered electrode, which becomes less negative with increasing silane partial pressure.
- Research Organization:
- Metallurgy and Materials Science Division of Brookhaven National Laboratory, Upton, NY 11973
- OSTI ID:
- 5814715
- Journal Information:
- IEEE Trans. Plasma Sci.; (United States), Journal Name: IEEE Trans. Plasma Sci.; (United States) Vol. PS-14:2; ISSN ITPSB
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
COMPUTERIZED SIMULATION
CURRENTS
DIRECT CURRENT
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
ELECTRODES
ELECTRON DENSITY
ELEMENTS
ENERGY-LEVEL TRANSITIONS
EXCITATION
GLOW DISCHARGES
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
MEDIUM VACUUM
MONTE CARLO METHOD
NONMETALS
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PARTIAL PRESSURE
PHYSICAL PROPERTIES
POWER DENSITY
PRESSURE EFFECTS
RF SYSTEMS
SILANES
SILICON COMPOUNDS
SIMULATION
TIME DEPENDENCE
360603 -- Materials-- Properties
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
COMPUTERIZED SIMULATION
CURRENTS
DIRECT CURRENT
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
ELECTRODES
ELECTRON DENSITY
ELEMENTS
ENERGY-LEVEL TRANSITIONS
EXCITATION
GLOW DISCHARGES
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
MEDIUM VACUUM
MONTE CARLO METHOD
NONMETALS
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PARTIAL PRESSURE
PHYSICAL PROPERTIES
POWER DENSITY
PRESSURE EFFECTS
RF SYSTEMS
SILANES
SILICON COMPOUNDS
SIMULATION
TIME DEPENDENCE