Drive through doping process for manufacturing low back surface recombination solar cells

Patent · Tue Nov 03 04:00:00 EST 1987

OSTI ID:5813798

Mardesich, N

A method for passivating the back metallization of a solar cell and forming deep impurity doped regions under the back contacts of the solar cell is described comprising the steps of: providing a p-type wafer of semiconductor material with a front and back essentially parallel major surfaces; forming an n + layer under the front major surface of the wafer defining and n/sup +/-p junction between the front and back major surfaces; forming p+ layer under the back surface of the wafer defining a p/sup +/-p junction between the front and back major parallel surfaces, the p/sup +/-p junction and the n/sup +/-p junction defining a p-type layer therebetween; depositing a nonconductive layer on the major surface; depositing a metal paste in a predetermined pattern onto the exposed major surface of the nonconductive layer; heating the wafer and the metal paste to a predetermined temperature so that the metal paste will oxidize, and cooling the wafer to form p/sup +/ type impurity doped regions in a predetermined pattern extending from the back surface of the wafer into the wafer to a predetermined depth.

• Assignee: Spectrolab, Inc., Sylmar, CA
• Patent Number(s): US 4703553
• OSTI ID: 5813798
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
COOLING
CRYSTAL DOPING
DEPOSITION
DIRECT ENERGY CONVERTERS
EQUIPMENT
FABRICATION
HEATING
JUNCTIONS
LAYERS
MATERIALS
METALLURGICAL EFFECTS
METALLURGY
N-TYPE CONDUCTORS
P-N JUNCTIONS
P-TYPE CONDUCTORS
PASSIVATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT