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Title: Dielectric of the basis of lead titanates, method of manufacturing same and a multilayer capacitor comprising the dielectric

Patent ·
OSTI ID:5813792

A dielectric having a sintering temperature in the range from 800/sup 0/ to 1000/sup 0/ C. on the basis of lead titanates, in which at least 50 mol % of the titanium are substituted by Mg and W, the stoichiometric basic compound having the following composition: Pb(Ti/sub 1/-x-yMg /SUB x/ W /SUB y/ )O/sub 3/ wherein 0.25less than or equal toxless than or equal to0.35 and 0.25less than or equal toyless than or equal to0.35 and comprising an addition of 0.001 to 0.006 (5PbO+1-WO/sub 3/) on an additive molar basis.

Assignee:
US Philips Corporation
Patent Number(s):
US 4474894
OSTI ID:
5813792
Resource Relation:
Patent Priority Date: Priority date 22 Feb 1983, Germany, Federal Republic of (F.R. Germany); Other Information: PAT-APPL-468818
Country of Publication:
United States
Language:
English