Characterization of near edge optical transitions in undoped and doped GaN/sapphire grown by MOVPE, HVPE and GSMBE

Conference · Wed Dec 31 04:00:00 EST 1997

OSTI ID:581142

Leroux, M; Beaumont, B; Grandjean, N; Massies, J; Gibart, P ^[1]

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1. Centre de Recherches sur l`Hetero-Epitaxie et ses Applications-CNRS, Valbonne (France)

The authors report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing hetero-epitaxial strain to be taken into account in the interpretation of luminescence spectra. MOVPE provides the highest purity samples so far. From the luminescence study of n- and p-type doped samples, activation energies of 265 {+-} 10 meV and 34 {+-} 2 meV are deduced for Mg acceptors and Si donors respectively. From the luminescence spectra of HVPE grown samples, the presence of a perturbed interfacial n{sup +} layer is evidenced.

• OSTI ID: 581142
• Report Number(s): CONF-961202--; ISBN 1-55899-353-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPARATIVE EVALUATIONS
DOPED MATERIALS
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
VAPOR PHASE EPITAXY