Growth of GaN by sublimation technique and homoepitaxial growth by MOCVD
- Univ. of Tokushima, Minamijosanjima (Japan). Dept. of Electrical and Electronic Engineering
The growth of bulk GaN by sublimation method and a homoepitaxial growth by MOCVD are reported. A photo-pumped stimulated emission is obtained from a homoepitaxial layer. The source powder used as a source in the sublimation method is investigated in detail, and it is shown that the powder contains many kinds of compounds consisting mainly of gallium, nitrogen and hydrogen. Growth nucleation control is performed by partly covering an MOCVD-GaN or a scratched-sapphire (0001) by SiO{sub 2}. Hexagonal columns of the size of about 200 {micro}m in diameter and about 200 {micro}m in height are selectively and uniformly grown at the window sites. This technique enables the device processing of crystallites and also helps to increase crystal size by increasing growth time, since it prevents the nucleation of new crystallites which work as sink of the growing species.
- OSTI ID:
- 580951
- Report Number(s):
- CONF-961202--; ISBN 1-55899-353-3
- Country of Publication:
- United States
- Language:
- English
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