Experimental investigation of the infrared absorption saturation in p-type germanium and silicon

Journal Article · Mon Feb 01 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93056· OSTI ID:5808758

James, R B; Schweig, E; Smith, D L; McGill, T C

We investigate the room-temperature absorption saturation of p-Ge and p-Si for several samples over a range of doping densities for light having wavelengths of 10.6 and 9.6 ..mu..m. The transmission data can be fairly well described using an intensity dependent absorption coefficient characteristic of an inhomogeneously broadened two-level system. Measurements of the saturation intensity of p-Ge show that I/sub s/ increases monotonically with increasing hole concentration, and that the resonant transition is significantly easier to saturate in p-Ge than in p-Si for the samples we examined.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 5808758
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
360603* -- Materials-- Properties
ABSORPTION
ABSORPTIVITY
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY LEVELS
GERMANIUM
HOLES
INFRARED RADIATION
MATERIALS
MATHEMATICAL MODELS
MEDIUM TEMPERATURE
METALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
QUANTITY RATIO
RADIATIONS
RESONANCE
SATURATION
SEMIMETALS
SILICON
TRANSMISSION
WAVELENGTHS