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Mg diffused zinc phosphide n/p junctions

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.329956· OSTI ID:5806562
Heating a Mg/Zn/sub 3/P/sub 2/ Schottky solar cell in air results in the formation of an n/p junction due to the diffusion of Mg in Zn/sub 3/P/sub 2/. The cells are fabricated on large grain polycrystalline Zn/sub 3/P/sub 2/ wafers. The junction depth is determined from the change in the measured collection efficiency of the cell after heating and follows a (time)/sup 1/2/ dependence. The diffusion coefficient has been measured in the temperature range of 75--150 /sup 0/C. The short-circuit current and open-circuit voltage of the homojunction qualitatively follow the theoretical predictions. A diffusion voltage of 1.2 V and a maximum open-circuit voltage of 0.6 V have been achieved.
Research Organization:
Institute of Energy Conversion, University of Delaware, Newark, Delaware 19711
OSTI ID:
5806562
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:1; ISSN JAPIA
Country of Publication:
United States
Language:
English