A phenomenological model for systematization and prediction of doping limits in II{endash}VI and I{endash}III{endash}VI{sub 2} compounds
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Semiconductors differ widely in their ability to be doped. As their band gap increases, it is usually possible to dope them either n or p type, but not both. This asymmetry is documented here, and explained phenomenologically in terms of the {open_quotes}doping pinning rule.{close_quotes} {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 580313
- Journal Information:
- Journal of Applied Physics, Vol. 83, Issue 6; Other Information: PBD: Mar 1998
- Country of Publication:
- United States
- Language:
- English
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