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Electronic states in oxide superconductors

Journal Article · · Physical Review, B: Condensed Matter; (USA)
; ;  [1]
  1. Institute for Materials Research, Tohoku University, Sendai 980, Japan (JP)
Electronic states near the metal-insulator transition in oxide superconductors are studied in the {ital p}-{ital d} mixing model by use of the Green's-function method. Due to spin and charge fluctuations induced in the {ital p}-{ital d} hopping, electronic states near the Fermi level are strongly renormalized and show anomalous behavior in the insulator-to-metal transition; that is, the occupied {ital p} band has a tail structure at the top of the band and with hole doping, an additional narrow band develops at the Fermi level inside the charge-transfer gap, splitting from the main {ital p} band. The main {ital p} band gradually approaches the Fermi level with hole doping. The results seem to explain qualitative behaviors of experiments in photoemission and optical conductivity.
OSTI ID:
5794801
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:13; ISSN PRBMD; ISSN 0163-1829
Country of Publication:
United States
Language:
English