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Advantages of quantum well solar cells for TPV

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.53282· OSTI ID:577804
; ; ; ;  [1]; ; ;  [2]
  1. EXSS Group, Department of Physics, Imperial College, London SW7 2BZ (United Kingdom)
  2. EPSRC III-V Facility, University of Sheffield, Sheffield (United Kingdom)
We discuss the advantages of quantum well solar cells (QWSCs) for thermophotovoltaic (TPV) applications and illustrate them with a test cell grown in GaInAsP/InGaAs lattice-matched to InP but not optimised for TPV. It is shown that a GaInAsP quaternary cell with a bandgap of 1.1 {mu}m with 60 InGaAs QWs has an open circuit voltage of (1.7{plus_minus}0.1) times that of a homogeneous InGaAs cell under a narrow band ytterbia-like illuminating spectrum. Similar enhancements are observed under an erbia-like illumination and in a broad band illumination approximating a black body at 3000K. The quaternary cell absorbs a similar range of wavelengths close to the InGaAs cell. Also, better temperature coefficients for the QWSC than the control cell are observed in a spectrum approximating a black body at 3000K. A comparison is made between the QWSC and two other cells, one InGaAs and one Si, using published spectral response and illuminated current/voltage data. It is shown that whilst InGaAs has a higher power output in black body spectra and Si a higher power output in an ideal ytterbia spectra the QWSC has the highest output in a combination of 2000K black body and ytterbia spectra where 56{percent} of the power output is in the ytterbia emission band. Possible improvements to this non-optimised QWSC are discussed. {copyright} {ital 1997 American Institute of Physics.}
Sponsoring Organization:
USDOE
OSTI ID:
577804
Report Number(s):
CONF-9705119--
Journal Information:
AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 401; ISSN 0094-243X; ISSN APCPCS
Country of Publication:
United States
Language:
English