Suppression of longitudinal spatial hole-burning effect in /lambda//4-shifted DFB lasers by nonuniform current distribution

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29255· OSTI ID:5774415

Usami, M; Akiba, S

The mode property and the output property of an asymmetric /lambda//4-shifted DFB laser with a distributed injection current density along the cavity are investigated theoretically and experimentally. Coupled wave equations are developed to describe the longitudinal spatial hole-burning phenomenon due to both distributions of a stimulated recombination carrier density and an injection current density. The calculations show that an appropriate distribution of the injection current similar to the intensity profile can effectively suppress the longitudinal spatial hole-burning effect from the aspect of the threshold gain difference /Delta//alpha//sub th/. Actually, the 1.55 /alpha/m InGaAsP/InP asymmetric /lambda//4-shifted DFB laser was fabricated with three divided electrodes and the authors confirmed the improvement of the linearity of the output characteristics, decreasing of threshold current, the stability of the single-mode property, and narrowing of the spectral linewidth by injection current with a distribution along the cavity.

• Research Organization: Research and Development Lab., KDD Co., Ltd., Meguro-ku, Tokyo 153 (JP)
• OSTI ID: 5774415
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ASYMMETRY
CARRIER DENSITY
CURRENT DENSITY
ELECTRODES
EMISSION
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASERS
LINE WIDTHS
MODE LOCKING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION