The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs

Conference · Sat Dec 01 00:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5772191

Kosier, S L; Schrimpf, R D; Cellier, F E; Gallaway, K F ^[1]

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1. Arizona Univ., Tucson, AZ (USA). Dept. of Electrical and Computer Engineering

The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs were examined through two-dimensional simulation. Breakdown-voltage performance of p-channel power MOSFETs was found to be very different from corresponding n-channel power MOSFETs. In p-channel devices, simulation showed breakdown-voltage enhancement for low values of positive oxide-trapped charge, {ital N{sub ot}}, whereas for high values of {ital N{sub ot}}, the breakdown voltage may or may not continue to increase, and may actually decrease in some topologies. For comparison, in n-channel devices, increases in {ital N{sub ot}} always cause breakdown-voltage degradation. The uncertainties stem from the interaction of the depletion region of the device (which is a function of its termination method) with its isolation technology, making it difficult to predict breakdown voltage for large {ital N{sub ot}}. However, insights gained through analysis of depletion-region spreading in p-channel devices suggest a termination/isolation scheme, the VLD-FRR, that will enhance p-channel device reliability in radiation environments.

• OSTI ID: 5772191
• Report Number(s): CONF-900723-; CODEN: IETNA; TRN: 91-014535
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 37:6; Conference: 27. IEEE annual conference on nuclear and space radiation effects, Reno, NV (USA), 16-20 Jul 1990; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MOSFET
PHYSICAL RADIATION EFFECTS
AUGMENTATION
BREAKDOWN
IONIZATION
SIMULATION
TWO-DIMENSIONAL CALCULATIONS
FIELD EFFECT TRANSISTORS
MOS TRANSISTORS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
440200 - Radiation Effects on Instrument Components
Instruments
or Electronic Systems