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Radiochemical investigation of the dissolution and migration processes of bismuth in lead telluride and solid solutions based on it

Journal Article · · Sov. Radiochem. (Engl. Transl.); (United States)
OSTI ID:5763030
;
The diffusion coefficients of /sup 207/Bi in PbTe and PbSe/sub 0.08/Te/sub 0.92/ with p-type conduction have been measured. In the 550-750/degree/C range the plots of the dependence of the diffusion coefficients of bismuth on the temperature are described by Arrhenius equations, and the activation energies for the diffusion of bismuth in weakly doped PbTe and PbSe/sub 0.08/Te/sub 0.92/ are equal to 183 and 196 kJ/mole, respectively. The values of /gamma/, which characterize the isothermal dependence of the diffusion coefficients of bismuth in PbSe/sub 0.08//centered dot/Te/sub 0.92/ on the concentration of the charge carriers and the vapor pressure of the lead in the equilibrium with the solid phase during doping annealing, have been determined: D/sub Bi/ /yields/ p/sub Pb//sup /gamma//.
OSTI ID:
5763030
Journal Information:
Sov. Radiochem. (Engl. Transl.); (United States), Journal Name: Sov. Radiochem. (Engl. Transl.); (United States) Vol. 30:1; ISSN SVRDA
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400101* -- Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
ACTIVATION ENERGY
ANNEALING
ARRHENIUS EQUATION
BETA DECAY RADIOISOTOPES
BETA-PLUS DECAY RADIOISOTOPES
BINDING ENERGY
BISMUTH
BISMUTH 207
BISMUTH COMPOUNDS
BISMUTH ISOTOPES
BISMUTH TELLURIDES
CARRIER DENSITY
CHALCOGENIDES
CHEMICAL ANALYSIS
CRYSTAL DOPING
DIFFUSION
DISSOLUTION
DOPED MATERIALS
ELECTRON CAPTURE RADIOISOTOPES
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
EQUATIONS
FERMIONS
HEAT TREATMENTS
HEAVY NUCLEI
ISOTOPES
JUNCTIONS
LEAD COMPOUNDS
LEAD SELENIDES
LEAD TELLURIDES
LEPTONS
MATERIALS
METALS
NUCLEI
ODD-EVEN NUCLEI
P-N JUNCTIONS
PHOTODIODES
PHYSICAL PROPERTIES
QUANTITATIVE CHEMICAL ANALYSIS
RADIOCHEMICAL ANALYSIS
RADIOISOTOPES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
TELLURIDES
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
THERMODYNAMIC PROPERTIES
VALENCE
VAPOR PRESSURE
YEARS LIVING RADIOISOTOPES