Solid State Technology Branch of NASA Lewis Research Center second annual digest, June 1989-June 1990

Technical Report · Fri Jun 01 00:00:00 EDT 1990

OSTI ID:5762687

Heat treatment at 70 C of low carrier concentration p-type HgCdTe samples (p sub o = 8 x 10 exp 14/cm) generates an inverted surface layer. A two day anneal process below 95 C did not affect the Hall coefficient, whereas an almost complete recovery was obtained by annealing at 120 C. While bulk electron mobility, obtained from PEM data, remained high (about 9 x 10 exp 4 sq cm/V s at 77 K), surface mobility is lower by more than an order of magnitude. Surface recombination velocity indicates a continuous improvement with increased temperature, and the activation energy remains equal to the vacancies energy level. The proposed mechanism is that of positive changes in the sulfide migrating towards the interface and generating an image inversion layer.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
• OSTI ID: 5762687
• Report Number(s): N-91-18297; NASA-TM-103226; E-5642; NAS-1.15:103226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
ELECTRICAL PROPERTIES
HEAT TREATMENTS
MERCURY TELLURIDES
ACTIVATION ENERGY
ANNEALING
CRYSTAL DEFECTS
ELECTRON MOBILITY
ENERGY LEVELS
HALL EFFECT
SEMICONDUCTOR MATERIALS
SURFACE PROPERTIES
CADMIUM COMPOUNDS
CHALCOGENIDES
CRYSTAL STRUCTURE
ENERGY
MATERIALS
MERCURY COMPOUNDS
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES
TELLURIDES
TELLURIUM COMPOUNDS
360603* - Materials- Properties