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Photoassisted reduction of sulfur dioxide in nonaqueous solutions at p-type semiconductor electrodes

Journal Article · · Inorg. Chem.; (United States)
DOI:https://doi.org/10.1021/ic00153a015· OSTI ID:5750931
The electrochemical behavior of SO/sub 2/ has been investigated at illuminated (632.8 and 514.5 nm) p-type semiconducting silicon (Si) tungsten sulfide (WS/sub 2/), and indium phosphide (InP) in (tetra-n-butyl ammonium perchlorate n-Bu/sub 4/N)C1O/sub 4/ solutions. SO/sub 2/ is photoreducible at each of these materials to form S/sub 2/O/sub 4//sup 2 -/, but the electrical power savings efficiencies are variable. The best power savings efficiency, approx. 11% at 514.5 nm (100 mW/cm/sup 2/), is obtained with a p-type InP photocathode modified by photoelectrodeposition of approx. 5 x 10/sup -8/ mol/cm/sup 2/ of Pt onto the surface. Naked p-InP is considerably less efficient, owing to poor kinetics for the reduction of SO/sub 2/. The deposition of platinum (Pt) onto p-InP forms neither a uniform ohmic contract nor a Schottky barrier; rather, studies of platinized n-InP show directly that the Pt serves as a catalyst for SO/sub 2/ reduction. Power savings efficiencies for p-type WS/sub 2/ and textured Si are low, owing to small output voltages. Preparative, controlled-potential photoelectrochemical reduction of SO/sub 2/ at all three photoelectrodes and Pt in CH/sub 3/CN/0.1 M SO/sub 2//0.5 M (n-Bu/sub 4/N)ClO/sub 4/ has been demonstrated to give > 90% current efficiency for formation of S/sub 2/O/sub 4//sup 2 -/, which can be precipitated and collected as Na/sub 2/S/sub 2/O/sub 4/.
OSTI ID:
5750931
Journal Information:
Inorg. Chem.; (United States), Journal Name: Inorg. Chem.; (United States) Vol. 22:11; ISSN INOCA
Country of Publication:
United States
Language:
English