Resistance behavior of Cr-Si-O thin films
Thin coatings of Cr-Si-O are assessed for use as a resistor. The submicron thick films are sputter deposited using a (l-x)Ar-(x)O{sub 2} working gas. Several compacts of metal and oxide powders are commercially prepared for use as the sputter targets. The deposition process yields film compositions which range from 2 to 30 at.% Cr and 20 to 45 at.% Si as measured using Rutherford backscattering. A broad range of resistivities from 10{sup 1} to 10{sup 14}{Omega} cm are found as measured through the film thickness between metal pads deposited onto the Cr-Si-O surface. The film structure and morphology are characterized using transmission electron microscopy from which the resistance behavior can be correlated to the distribution of metallic particles. Thermal aging reveals the metastability of the Cr- Si-O film morphology and resistance behavior.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 574773
- Report Number(s):
- UCRL-JC-125296; CONF-970201-; ON: DE98050228
- Resource Relation:
- Conference: 126. annual meeting of the Minerals, Metals and Materials Society, Orlando, FL (United States), 9-13 Feb 1997; Other Information: PBD: 23 Oct 1996
- Country of Publication:
- United States
- Language:
- English
Similar Records
Sputter-Deposited Mo Thin Films: Multimodal Characterization of Structure, Surface Morphology, Density, Residual Stress, Electrical Resistivity, and Mechanical Response
Microstructure and temperature coefficient of resistance of thin cermet resistor films deposited from CrSi{sub 2}-Cr-SiC targets by S-gun magnetron