Method of making a Josephson junction with a diamond-like carbon insulating barrier

Patent · Tue Nov 12 04:00:00 EST 1991

OSTI ID:5746661

Hed, A Z

This patent describes a method of making a Josephson junction. It comprises depositing upon a substrate a first layer of high-temperature superconductive oxide having a critical temperature above 23 K.; depositing on the first layer to a thickness in excess of 200 angstroms an insulating layer of diamond-like carbon resistant to cation diffusion therethrough and incapable of interdiffusing with superconductive oxides of the junction; plasma etching the insulating layer to leave the insulating layer with a thickness of 20 to 100 angstroms on the first layer; to leave a continuous film thereof on the first layer of a thickness of 20 to 100 angstroms; and depositing on the insulating layer a second layer of high-temperature superconductive oxide having a critical temperature above 23 K. and forming with the first layer and the insulating layer a Josephson junction at a temperature at least equal to one of the critical temperatures.

• Assignee: Troy Investments, Inc., Nashua, NH (United States)
• Patent Number(s): A; US 5064809
• Application Number: PPN: US 7-290178
• OSTI ID: 5746661
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360207 -- Ceramics
Cermets
& Refractories-- Superconducting Properties-- (1992-)
665411 -- Basic Superconductivity Studies-- (1992-)
665412* -- Superconducting Devices-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOGENIDES
CRITICAL TEMPERATURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ETCHING
FABRICATION
HIGH-TC SUPERCONDUCTORS
JOSEPHSON JUNCTIONS
JUNCTIONS
LAYERS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PLASMA
SOLID-STATE PLASMA
SUBSTRATES
SUPERCONDUCTING JUNCTIONS
SUPERCONDUCTIVITY
SUPERCONDUCTORS
SURFACE FINISHING
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE