Microscopic calculation of critical layer thickness for coherently strained silicon-like structures
Conference
·
OSTI ID:5743293
Monte Carlo based microscopic techniques were used to study the stability of thin coherently strained layers of mismatched silicon-like semiconductor material grown on the (111) silicon surface. The atomic interaction used for this study is the Stillinger-Weber potential, modified to allow modelling of mismatched materials. Mismatched layers from 3 to 80 A thickness were considered. For layers greater than about 20 A thickness, the critical layer thickness is accurately described by the continuum theory of Matthews and Blakeslee. For thinner layers, however, the strain energy associated with misfit dislocations becomes greater than the continuum value, resulting in smaller critical layer thickness, to the extent that critical mismatch as a function of layer thickness becomes non-monotonic for the thinnest films considered.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5743293
- Report Number(s):
- SAND-86-0031C; CONF-8605111-1; ON: DE86009853
- Country of Publication:
- United States
- Language:
- English
Similar Records
Atomistic Monte Carlo calculation of critical layer thickness for coherently strained siliconlike structures
Atomistic calculation of stability and metastability of coherently strained silicon-like structures
Atomistic study of structural metastability in coherently strained Si-like layers
Journal Article
·
Mon Sep 15 00:00:00 EDT 1986
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5039068
Atomistic calculation of stability and metastability of coherently strained silicon-like structures
Conference
·
Tue Dec 31 23:00:00 EST 1985
·
OSTI ID:6727755
Atomistic study of structural metastability in coherently strained Si-like layers
Journal Article
·
Wed Apr 15 00:00:00 EDT 1987
· Phys. Rev. B: Condens. Matter; (United States)
·
OSTI ID:7016096