Effect of Debye shielding on the volt-farad characteristic of the Schottky barrier

Journal Article · Sun Mar 01 00:00:00 EST 1987 · Sov. Microelectron.; (United States)

OSTI ID:5739499

Zotov, L V; Grigor'ev, V K; Petrovskii, V I

A knowledge of the volt-farad characteristic (VFC) of the Schottky barrier is essential for computing the doping profile in semiconductor materials as well as for devices built around them. The equation obtained is based on the assumption that the impurity has been completely ionized, that the free charge carriers in the space-charge region were absent, and that the quasineutrality condition was observed in the remainder of the semiconductor. This latter condition imposes rather strict requirements on the use of the equation because it becomes invalid during sharp variations in the concentration of the doping impurity. The effect of free charge carriers diffusing into the epitaxial layer from the substrate - the Debye shielding effect - is examined by the authors by using a Schottky barrier created on the surface of a high-impedance epitaxial layer grown on a low-impedance layer of the same type of semiconductor.

• OSTI ID: 5739499
• Journal Information: Sov. Microelectron.; (United States), Vol. 15:4; Other Information: Translated from Mikroelektronika Akad. Nauk SSSR; 15: No. 4, 308-313(Jul-Aug 1986)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHARGE CARRIERS
DIFFUSION
SCHOTTKY BARRIER DIODES
CRYSTAL DOPING
DEBYE LENGTH
ELECTRIC CONDUCTIVITY
SEMICONDUCTOR MATERIALS
CARRIER DENSITY
CARRIER MOBILITY
CHARGE DISTRIBUTION
DEPLETION LAYER
ELECTRON DENSITY
ELECTRON MOBILITY
EPITAXY
MATHEMATICAL MODELS
SPACE CHARGE
DIMENSIONS
ELECTRICAL PROPERTIES
LAYERS
LENGTH
MATERIALS
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
360603* - Materials- Properties
360602 - Other Materials- Structure & Phase Studies